MR0A16AMYS35磁性随机存储器SPI MRAM原厂现货everspin代理商

Everspin MRAM是一种具有革命性的存储器，其原理是利用电子自旋的磁性结构，来提供不会产生损耗的非挥发特性。Everspin MRAM可在集成了硅电路的磁性材料中存储信息，以在单一、可无限使用的组件中提供SRAM的速度以及闪存的非挥发特性。Everspin是从飞思卡尔半导体公司分离出来的一家独立公司。2006年，Everspin推出业界**款商业化MRAM产品。今日，Everspin MRAM已广泛用在数据存储、工业自动化、游戏、能源管理、通讯、运输、和航空电子领域。

INTRODUCTION
The MR0A16A is a 1,048,576-bit magnetoresistive random access memory (MRAM) device organized as 65,536 words of 16 bits. The MR0A16A offers SRAM compatible 35 ns read/write timing with unlimited en-durance. Data is always non-volatile for greater than 20 years. Data is automatically protected on power loss by low-voltage inhibit circuitry to prevent writes with voltage out of specification.

MR0A16A is the ideal memory solution for applications that must permanently store and retrieve critical data and programs quickly.

The MR0A16B is available in a small footprint 48-pin ball grid array (BGA) package and a 44-pin thin small outline package (TSOP Type 2). These packages are compatible with similar low-power SRAM products and other nonvolatile RAM products.

The MR0A16A provides highly reliable data storage over a wide range of temperatures. The product is avail-able with commercial temperature (0 to +70 °C), industrial temperature (-40 to +85 °C), extended tempera- ture (-40 to +105 °C), and Automotive AEC-Q100 Grade 1 (-40 to +125°) temperature range options.