EVERSPIN代理商短交期原厂供应MR2A08AMYS35R并口MRAM

存储器是计算机体系结构中的重要组成部分，对计算机的速度、集成度和功耗等都有决定性的影响。然而，目前的存储器难以同时兼顾各项性能指标，例如，硬盘的存储容量较高，但访问速度较慢(通常为微秒级)。缓存则相反，具有高速和低集成度的特点。

INTRODUCTION
The MR2A08A is a 4,194,304-bit magnetoresistive random access memory (MRAM) device organized as 524,288 words of 8 bits. The MR2A08A offers SRAM compatible 35ns read/write timing with unlimited endurance. Data is always non-volatile for greater than 20 years. Data is automatically protected on power loss by low-voltage inhibit circuitry to prevent writes with voltage out of specification.

The MR2A08A is the ideal memory solution for applications that must permanently store and retrieve critical data and programs quickly.

The MR2A08A is available in a small footprint 400-mil, 44-lead plastic small-outline TSOP type 2 package or an 8 mm x 8 mm, 48-pin ball grid array (BGA) package with 0.75 mm ball centers. These packages are compatible with similar low-power SRAM products and other non-volatile RAM products.

The MR2A08A provides highly reliable data storage over a wide range of temperatures. The product is offered with commercial temperature range (0 to +70 °C), industrial temperature range (-40 to +85 °C), and AEC-Q100 Grade 1 temperature range (-40 to +125 °C) options.