MR2A16AMA35R原厂现货MRAM存储器并口

根据存储器在计算机系统中所起的作用，可分为主存储器、辅助存储器、高速缓冲存储器、控制存储器等。为了解决对存储器要求容量大，速度快，成本低三者之间的矛盾，目前通常采用多级存储器体系结构，即使用高速缓冲存储器、主存储器和外存储器。

FEATURES
· Fast 35 ns Read/Write cycle
· SRAM compatible timing, uses existing SRAM controllers without redesign
· Unlimited Read & Write endurance
· Data non-volatile for >20 years at temperature
· One memory replaces Flash, SRAM, EEPROM and BBSRAM in a system for simpler, more efficient design
· Replaces battery-backed SRAM solutions with MRAM to improve reliability
· 3.3 volt power supply
· Automatic data protection on power loss
· Commercial, Industrial, Extended temperatures
· AEC-Q100 Grade 1 option
· All products meet MSL-3 moisture sensitivity level
· RoHS-compliant SRAM TSOP2 and BGA Packages