EVERSPIN代理MRAM存储器MR4A08BCYS35缓存芯片内存IC

存储器的类型将决定整个嵌入式系统的操作和性能，因此存储器的选择是一个非常重要的决策。无论系统是采用电池供电还是由市电供电，应用需求将决定存储器的类型(易失性或非易失性)以及使用目的(存储代码、数据或者两者兼有)。另外，在选择过程中,存储器的尺寸和成本也是需要考虑的重要因素。

INTRODUCTION
The MR4A08B is a 16,777,216-bit magnetoresistive random access memory (MRAM) device organized as 2,097,152 words of 8 bits.
The MR4A08B offers SRAM compatible 35ns read/write timing with unlimited endurance. Data is always non-volatile for greater than 20-years. Data is automatically protected on power loss by lowvoltage inhibit circuitry to prevent writes with voltage out of specification. The MR4A08B is the ideal memory solution for applications that must permanently store and retrieve critical data and programs quickly.
The MR4A08B is available in small footprint 400-mil, 44-lead plastic small-outline TSOP type-II package or 10 mm x 10 mm, 48-pin ball grid array (BGA) package with 0.75 mm ball centers. These packages are compatible with similar low-power SRAM products and other non-volatile RAM products.
The MR4A08B provides highly reliable data storage over a wide range of temperatures. The product is offered with commercial (0 to +70 °C) and industrial (-40 to +85 °C) operating temperature range options.