MRAM芯片MR4A16BYS35R 原厂现货54-TSOP2

INTRODUCTION
The MR4A16B is a 16,777,216-bit magnetoresistive random access memory (MRAM) device organized as 1,048,576 words of 16 bits. The MR4A16B offers SRAM compatible 35 ns read/write timing with unlimited endurance. Data is always non-volatile for greater than 20 years. Data is automatically pro-tected on power loss by low-voltage inhibit circuitry to prevent writes with voltage out of specification. To simplify fault tolerant design, the MR4A16B includes internal single bit error correction code with 7 ECC parity bits for every 64 data bits. The MR4A16B is the ideal memory solution for applications that must permanently store and retrieve critical data and programs quickly.
The MR4A16B is available in a small footprint 48-pin ball grid array (BGA) package and a 54-pin thin small outline package (TSOP Type 2). These packages are compatible with similar low-power SRAM products and other nonvolatile RAM products.
The MR4A16B provides highly reliable data storage over a wide range of temperatures. The product is offered with commercial temperature (0 to +70 °C), and industrial temperature (-40 to +85 °C) operating temperature options.