MR25H128AMDF存储器MRAM everspin代理

Density	Org.	Part Number	Pkg.	Voltage	Temp
128Kb	16Kx8	MR25H128AMDF	8-DFN sf	3.3v	AEC-Q100 Grade 1

FEATURES
· No write delays
· Unlimited write endurance
· Data retention greater than 20 years
· Automatic data protection on power loss
· Block write protection
· Fast, simple SPI interface with up to 40 MHz clock rate
· 2.7 to 3.6 Volt power supply range
· Low current sleep mode
· Industrial and Automotive temperatures
· Available in 8-pin DFN Small Flag RoHS-compliant package.
· Direct replacement for serial EEPROM, Flash, FeRAM
· Industrial Grade and AEC-Q100 Grade 1 and Grade 3 options
· Moisture Sensitivity MSL-3


根据存储器在计算机系统中所起的作用，可分为主存储器、辅助存储器、高速缓冲存储器、控制存储器等。为了解决对存储器要求容量大，速度快，成本低三者之间的矛盾，目前通常采用多级存储器体系结构，即使用高速缓冲存储器、主存储器和外存储器。