EVERSPIN一级代理商MRAM存储器MR4A08BMA35

FEATURES
· +3.3 Volt power supply
· Fast 35 ns read/write cycle
· SRAM compatible timing
· Unlimited read & write endurance
· Data always non-volatile for >20-years at temperature
· RoHS-compliant small footprint BGA and TSOP2 packages
· All products meet MSL-3 moisture sensitivity level

INTRODUCTION
The MR4A08B is a 16,777,216-bit magnetoresistive random access memory (MRAM) device organized as 2,097,152 words of 8 bits.
The MR4A08B offers SRAM compatible 35ns read/write timing with unlimited endurance. Data is always non-volatile for greater than 20-years. Data is automatically protected on power loss by lowvoltage inhibit circuitry to prevent writes with voltage out of specification. The MR4A08B is the ideal memory solution for applications that must permanently store and retrieve critical data and programs quickly.
The MR4A08B is available in small footprint 400-mil, 44-lead plastic small-outline TSOP type-II package or 10 mm x 10 mm, 48-pin ball grid array (BGA) package with 0.75 mm ball centers. These packages are compatible with similar low-power SRAM products and other non-volatile RAM products.
The MR4A08B provides highly reliable data storage over a wide range of temperatures. The product is offered with commercial (0 to +70 °C) and industrial (-40 to +85 °C) operating temperature range options.