工业级存储器MR4A08BYS35R存储芯片MRAM

Everspin MRAM是一种具有革命性的存储器，其原理是利用电子自旋的磁性结构，来提供不会产生损耗的非挥发特性。Everspin MRAM可在集成了硅电路的磁性材料中存储信息，以在单一、可无限使用的组件中提供SRAM的速度以及闪存的非挥发特性。Everspin是从飞思卡尔半导体公司分离出来的一家独立公司。2006年，Everspin推出业界**款商业化MRAM产品。今日，Everspin MRAM已广泛用在数据存储、工业自动化、游戏、能源管理、通讯、运输、和航空电子领域。

INTRODUCTION
The MR4A08B is a 16,777,216-bit magnetoresistive random access memory (MRAM) device organized as 2,097,152 words of 8 bits.
The MR4A08B offers SRAM compatible 35ns read/write timing with unlimited endurance. Data is always non-volatile for greater than 20-years. Data is automatically protected on power loss by lowvoltage inhibit circuitry to prevent writes with voltage out of specification. The MR4A08B is the ideal memory solution for applications that must permanently store and retrieve critical data and programs quickly.
The MR4A08B is available in small footprint 400-mil, 44-lead plastic small-outline TSOP type-II package or 10 mm x 10 mm, 48-pin ball grid array (BGA) package with 0.75 mm ball centers. These packages are compatible with similar low-power SRAM products and other non-volatile RAM products.
The MR4A08B provides highly reliable data storage over a wide range of temperatures. The product is offered with commercial (0 to +70 °C) and industrial (-40 to +85 °C) operating temperature range options.