MR4A16BCYS35R EVERSPIN总代理 54-TSOP2 MRAM存储器

计算机中全部信息，包括输入的原始数据、计算机程序、中间运行结果和较终运行结果都保存在存储器中。它根据控制器*的位置存入和取出信息。有了存储器，计算机才有记忆功能，才能保证正常工作。

存储器是计算机体系结构中的重要组成部分，对计算机的速度、集成度和功耗等都有决定性的影响。然而，目前的存储器难以同时兼顾各项性能指标，例如，硬盘的存储容量较高，但访问速度较慢(通常为微秒级)。缓存则相反，具有高速和低集成度的特点。

INTRODUCTION
The MR4A16B is a 16,777,216-bit magnetoresistive random access memory (MRAM) device organized as 1,048,576 words of 16 bits. The MR4A16B offers SRAM compatible 35 ns read/write timing with unlimited endurance. Data is always non-volatile for greater than 20 years. Data is automatically pro-tected on power loss by low-voltage inhibit circuitry to prevent writes with voltage out of specification. To simplify fault tolerant design, the MR4A16B includes internal single bit error correction code with 7 ECC parity bits for every 64 data bits. The MR4A16B is the ideal memory solution for applications that must permanently store and retrieve critical data and programs quickly.
The MR4A16B is available in a small footprint 48-pin ball grid array (BGA) package and a 54-pin thin small outline package (TSOP Type 2). These packages are compatible with similar low-power SRAM products and other nonvolatile RAM products.
The MR4A16B provides highly reliable data storage over a wide range of temperatures. The product is offered with commercial temperature (0 to +70 °C), and industrial temperature (-40 to +85 °C) operating temperature options.