EVERSPIN总代理MR25H128ACDFR非易失性存储MRAM

INTRODUCTION
The MR25H128A is a 128Kbit magnetoresistive random access memory (MRAM) device organized as 16,384 words of 8 bits. The MR25H128A offers serial EEPROM and serial Flash compatible read/write timing with no write delays and unlimited read/write endurance.
Unlike other serial memories, both reads and writes can occur randomly in memory with no delay between writes. The MR25H128A is the ideal memory solution for applications that must store and retrieve data and programs quickly using a small number of I/O pins.
The MR25H128A is available in a 5 mm x 6 mm 8-pin DFN Small Flag package compatible with serial EEPROM, Flash, and FeRAM products.
The MR25H128A provides highly reliable data storage over a wide range of temperatures. The product is offered with industrial (-40° to +85 °C) and AEC-Q100 Grade 1 (-40°C to +125 °C) and AEC-Q100 Grade 3 (-40° to +85 °C) operating temperature range options.

存储器是计算机体系结构中的重要组成部分，对计算机的速度、集成度和功耗等都有决定性的影响。然而，目前的存储器难以同时兼顾各项性能指标，例如，硬盘的存储容量较高，但访问速度较慢(通常为微秒级)。缓存则相反，具有高速和低集成度的特点。