MRAM存储芯片MR0A16AVYS35缓存芯片内存IC

FEATURES
· 3.3 Volt power supply
· Fast 35ns read/write cycle
· SRAM compatible timing
· Unlimited read & write endurance
· Commercial, Industrial, and Extended Temperatures
· Data non-volatile for >20 years at temperature
· RoHS-compliant TSOP2 and BGA packages available
· All products meet MSL-3 moisture sensitivity level
· Automotive AEC-Q100 Grade 1 option available

INTRODUCTION
The MR0A16A is a 1,048,576-bit magnetoresistive random access memory (MRAM) device organized as 65,536 words of 16 bits. The MR0A16A offers SRAM compatible 35 ns read/write timing with unlimited en-durance. Data is always non-volatile for greater than 20 years. Data is automatically protected on power loss by low-voltage inhibit circuitry to prevent writes with voltage out of specification.

MR0A16A is the ideal memory solution for applications that must permanently store and retrieve critical data and programs quickly.

The MR0A16B is available in a small footprint 48-pin ball grid array (BGA) package and a 44-pin thin small outline package (TSOP Type 2). These packages are compatible with similar low-power SRAM products and other nonvolatile RAM products.

The MR0A16A provides highly reliable data storage over a wide range of temperatures. The product is avail-able with commercial temperature (0 to +70 °C), industrial temperature (-40 to +85 °C), extended tempera- ture (-40 to +105 °C), and Automotive AEC-Q100 Grade 1 (-40 to +125°) temperature range options.