MR2A16AYS35R非易失性磁性存储器EVERSPIN代理商

FEATURES
· Fast 35 ns Read/Write cycle
· SRAM compatible timing, uses existing SRAM controllers without redesign
· Unlimited Read & Write endurance
· Data non-volatile for >20 years at temperature
· One memory replaces Flash, SRAM, EEPROM and BBSRAM in a system for simpler, more efficient design
· Replaces battery-backed SRAM solutions with MRAM to improve reliability
· 3.3 volt power supply
· Automatic data protection on power loss
· Commercial, Industrial, Extended temperatures
· AEC-Q100 Grade 1 option
· All products meet MSL-3 moisture sensitivity level
· RoHS-compliant SRAM TSOP2 and BGA Packages

INTRODUCTION
The MR2A16A is a 4,194,304-bit magnetoresistive random access memory (MRAM) device organized as 262,144 words of 16 bits. The MR2A16A offers SRAM compatible 35 ns read/write timing with unlimited endurance. Data is always non-volatile for greater than 20 years. Data is automatically protected on power loss by low-voltage inhibit circuitry to prevent writes with voltage out of specification.
The MR2A16A is the ideal memory solution for applications that must permanently store and retrieve critical data and programs quickly.
The M2A16A is available in a small footprint 48-pin ball grid array (BGA) package and a 44-pin thin small outline package (TSOP Type 2). These packages are compatible with similar low-power SRAM products and other nonvolatile RAM products.
The MR2A16A provides highly reliable data storage over a wide range of temperatures. The product is offered with Commercial (0 to +70 °C), Industrial (-40 to +85 °C), Extended (-40 to +105 °C), and AEC-Q100 Grade 1 (-40 to +125 °C) operating temperature range options.